Comparative determination of atomic boron and carrier concentration in highly boron doped nano-crystalline diamond

We have compared the total boron content and hole carrier concentration values obtained from various destructive and non-destructive quantification methods in boron doped nano-crystalline diamond films prepared over a range of doping levels, using microwave plasma enhanced chemical vapour deposition. Destructive secondary-ion mass spectrometry and relatively unreported glow discharge optical emission spectrometry were complemented by non-destructive Raman, spectroscopic ellipsometry and van der Pauw Hall measurements. Measurement techniques are discussed, including details of the glow discharge optical emission spectrometry technique; use of different laser powers and wavelengths, fitting parameters for Raman spectroscopy, and improved ellipsometry modelling. Finally, measured values are compared and discussed regarding their viability for estimation of total boron and electrically active boron in doped nano-crystalline diamond layers.